N. B. Zvonkov, S. A. Akhlestina, A. V. Ershov, B. N. Zvonkov, G. A. Maksimov, E. A. Uskova, “Semiconductor lasers with broad tunnel-coupled waveguides, emitting at a wavelength of 980 nm”, Kvantovaya Elektronika, 1999, Volume 26, Number 3,Pages <nobr>217

This article is cited in 9 papers

Lasers

Semiconductor lasers with broad tunnel-coupled waveguides, emitting at a wavelength of 980 nm

N. B. Zvonkov^a, S. A. Akhlestina^b, A. V. Ershov^a, B. N. Zvonkov^a, G. A. Maksimov^a, E. A. Uskova^a

^a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
^b National Research Lobachevsky State University of Nizhny Novgorod

Abstract: InGaP/GaAs/InGaAs semiconductor lasers with broad tunnel-coupled waveguides were developed and investigated experimentally. Output radiation power of 5.2 — 5.8 W was obtained from an emitting region 100 μm wide with a 36° divergence of the emitted radiation in a plane perpendicular to the p – n junction.

PACS: 42.55.Px, 42.82.Et

Received: 28.10.1998