RUS  ENG
Full version
JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 2011 Volume 41, Number 8, Pages 703–708 (Mi qe14583)

This article is cited in 8 papers

Control of radiation parameters

On stability of self-sustained volume discharge in working mixtures of non-chain electrochemical HF laser

A. A. Belevtseva, S. Yu. Kazantsevb, I. G. Kononovb, A. A. Lebedevb, S. V. Podlesnykhb, K. N. Firsovb

a Institute of Extremal States Thermophysics, Scientific Association for High Temperatures, Russian Academy of Sciences, Moscow
b Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow

Abstract: Burning voltage of a self-sustained volume discharge (SSVD) is studied as a function of the specific energy deposition in SF5 with C2—H6 and H2 mixtures, which are working media of a non-chain electrochemical HF laser. It is established that the voltage rises linearly with increasing the specific energy deposition, the relative voltage rise in the SF6—C2H6 mixtures being noticeably higher than in pure SF6 and SF6—H2 mixtures. An assumption is suggested and substantiated on determining the role of molecule dissociation by the electron impact leading to the observed voltage rise. From experimental data we have found approximate energy expenditures of producing dissociation fragments including atomic fluorine in a discharge in pure SF6 Êd(F)= 5±1 eV. The values of Ed well agree with literature data obtained by other experimental methods. A conclusion is drawn that the dissociation process is the main mechanism limiting the current density, which implies SSVD realisation without preliminary gas ionisation in working mixtures of a non-chain HF laser and determines a higher stability of the volume discharge in mixtures of SF6 with hydrocarbons (deuterocarbons) as compared to mixtures with hydrogen (deuterium). A method is suggested and substantiated for numerical estimation of the limitation effect of the current density and its influence on the SSVD stability.

PACS: 42.55.Ks, 52.80.-s

Received: 10.03.2011


 English version:
Quantum Electronics, 2011, 41:8, 703–708

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2024