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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 2011 Volume 41, Number 8, Pages 677–680 (Mi qe14652)

This article is cited in 7 papers

Lasers

Broadband superluminescent diodes and semiconductor optical amplifiers for the spectral range 750 — 800 nm

S. N. Il'chenko, Yu. O. Kostin, I. A. Kukushkin, M. A. Ladugin, P. I. Lapin, A. A. Lobintsov, A. A. Marmalyuk, S. D. Yakubovich

Superlum Diodes Ltd., Moscow

Abstract: We have studied superluminescent diodes (SLDs) and semiconductor optical amplifiers (SOAs) based on an (AlxGa1-x)As/GaAs single quantum well structure with an Al content x ~0.1 in a 10-nm-thick active layer. Depending on the length of the active channel, the single-mode fibre coupled cw output power of the SLDs is 1 to 30 mW at a spectral width of about 50 nm. The width of the optical gain band in the active channel exceeds 40 nm. Preliminary operating life tests have demonstrated that the devices are sufficiently reliable.

PACS: 42.55.Px, 42.60.Lh, 85.60.Jb

Received: 06.05.2011


 English version:
Quantum Electronics, 2011, 41:8, 677–680

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© Steklov Math. Inst. of RAS, 2024