Laser diode bars based on strain-compensated AlGaPAs/GaAs heterostructures

Traditional (in the AlGaAs/GaAs system) and phosphorus-compensated (in the AlGaAs/AlGaPAs/GaAs system) laser heterostructures emitting at a wavelength of 850 nm are grown by MOVPE and studied. Laser diode bars are fabricated and their output characteristics are studied. The method used to grow heterolayers allowed us to control (minimise) mechanical stresses in the AlGaPAs/GaAs laser heterostructure, which made it possible to keep its curvature at the level of the initial curvature of the substrate. It is shown that the use of a compensated AlGaPAs/GaAs heterostructure improves the linear distribution of emitting elements in the near field of laser diode arrays and allows the power — current characteristic to retain its slope at high pump currents owing to a uniform contact of all emitting elements with the heat sink. The radius of curvature of the grown compensated heterostructures turns out to be smaller than that of traditional heterostructures.