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// Kvantovaya Elektronika
// Archive
Kvantovaya Elektronika,
1999
Volume 27,
Number 1,
Pages
19–20
(Mi qe1474)
This article is cited in
1
paper
Lasers
Microchip laser based on an Nd
3+
:GdVO
4
crystal
V. I. Vlasov
a
,
Yu. D. Zavartsev
a
,
A. I. Zagumennyi
a
,
P. A. Studenikin
a
,
I. A. Shcherbakov
a
,
C. P. Wyss
b
,
W. Luthy
b
,
H. P. Weber
b
a
Laser Materials and Technology Research Center, Prokhorov General Physics Institute, RAS, Moscow
b
Institute of Applied Physics, University of Bern, Switzerland
Abstract:
A diode-pumped microchip laser based on an Nd
3+
:GdVO
4
crystal was investigated. A maximum output power of about 4 W with a differential efficiency of 22% was obtained.
PACS:
42.25.Rz,
42.55.Sa
,
42.55.Xi
,
42.60.Jf
Received:
07.12.1998
Fulltext:
PDF file (109 kB)
Cited by
English version:
Quantum Electronics, 1999,
29
:4,
301–302
Bibliographic databases:
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Steklov Math. Inst. of RAS
, 2024