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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1999 Volume 27, Number 1, Pages 19–20 (Mi qe1474)

This article is cited in 1 paper

Lasers

Microchip laser based on an Nd3+:GdVO4 crystal

V. I. Vlasova, Yu. D. Zavartseva, A. I. Zagumennyia, P. A. Studenikina, I. A. Shcherbakova, C. P. Wyssb, W. Luthyb, H. P. Weberb

a Laser Materials and Technology Research Center, Prokhorov General Physics Institute, RAS, Moscow
b Institute of Applied Physics, University of Bern, Switzerland

Abstract: A diode-pumped microchip laser based on an Nd3+:GdVO4 crystal was investigated. A maximum output power of about 4 W with a differential efficiency of 22% was obtained.

PACS: 42.25.Rz, 42.55.Sa, 42.55.Xi, 42.60.Jf

Received: 07.12.1998


 English version:
Quantum Electronics, 1999, 29:4, 301–302

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