V. I. Kozlovsky, P. I. Kuznetsov, D. E. Sviridov, G. G. Yakushcheva, “Electron beam pumped Zn(Cd)Se/ZnMgSSe quantum well semiconductor disk laser”, Kvantovaya Elektronika, 2012, Volume 42, Number 7,Pages <nobr>583

This article is cited in 8 papers

Lasers

Electron beam pumped Zn(Cd)Se/ZnMgSSe quantum well semiconductor disk laser

V. I. Kozlovsky^a, P. I. Kuznetsov^b, D. E. Sviridov^a, G. G. Yakushcheva^b

^a P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
^b Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences

Abstract: We report pulsed 465-nm lasing in a longitudinally electron beam pumped Zn(Cd)Se/ZnMgSSe heterostructure with 30 quantum wells, grown by metalorganic vapour phase epitaxy. At an external spherical mirror radius of 30 mm, 3 % transmission of the mirror, and an electron energy of 42 keV, the peak laser output power reached 1.4 W. The pulse duration was 20 — 40 ns, the emission linewidth was within 0.3 nm, and the beam divergence was about 4 — 5 mrad, approaching the diffraction limit.

Keywords: semiconductor disk laser, electron beam pumping, ZnCdSe/ZnMgSSe heterostructure, quantum well, metalorganic vapour phase epitaxy.

PACS: 42.55.Px, 41.75.Fr, 42.60.Da, 42.60.Jf, 78.67.De

Received: 02.03.2012
Revised: 10.04.2012