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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 2012 Volume 42, Number 9, Pages 762–769 (Mi qe14894)

This article is cited in 31 papers

Optical fibres, lasers and amplifiers. Properties and applications

Optical properties of bismuth-doped silica fibres in the temperature range 300 — 1500 K

D. A. Dvoretskiiab, I. A. Bufetovb, V. V. Vel'miskinb, A. S. Zlenkob, V. F. Khopinc, S. L. Semenovb, A. N. Gur'yanovc, L. K. Denisova, E. M. Dianovb

a Bauman Moscow State Technical University
b Fiber Optics Research Center of the Russian Academy of Sciences, Moscow
c Institute of Chemistry of High-Purity Substances RAS, Nizhnii Novgorod

Abstract: The visible and near-IR absorption and luminescence bands of bismuth-doped silica and germanosilicate fibres have been measured for the first time as a function of temperature. The temperature-dependent IR luminescence lifetime of a bismuth-related active centre associated with silicon in the germanosilicate fibre has been determined. The Bi3+ profile across the silica fibre preform is shown to differ markedly from the distribution of IR-emitting bismuth centres associated with silicon. The present results strongly suggest that the IR-emitting bismuth centre comprises a lowvalence bismuth ion and an oxygen-deficient glass network defect.

Keywords: bismuth, bismuth-doped optical fibre, temperature dependence of optical absorption.

PACS: 42.81.Bm, 42.81.Cn, 42.81.Dp, 78.60.Lc

Received: 24.04.2012


 English version:
Quantum Electronics, 2012, 42:9, 762–769

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