P. N. Aruev, M. M. Barysheva, B. Ya. Ber, N. V. Zabrodskaya, V. V. Zabrodskii, A. Ya. Lopatin, A. E. Pestov, M. V. Petrenko, V. N. Polkovnikov, N. N. Salashchenko, V. L. Sukhanov, N. I. Chkhalo, “Silicon photodiode with selective Zr/Si coating for extreme ultraviolet spectral range”, Kvantovaya Elektronika, 2012, Volume 42, Number 10,Pages <nobr>943

This article is cited in 24 papers

Photodetectors

Silicon photodiode with selective Zr/Si coating for extreme ultraviolet spectral range

P. N. Aruev^a, M. M. Barysheva^b, B. Ya. Ber^a, N. V. Zabrodskaya^a, V. V. Zabrodskii^a, A. Ya. Lopatin^b, A. E. Pestov^b, M. V. Petrenko^a, V. N. Polkovnikov^b, N. N. Salashchenko^b, V. L. Sukhanov^a, N. I. Chkhalo^b

^a Ioffe Institute, St. Petersburg
^b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: The procedure of manufacturing silicon photodiodes with an integrated Zr/Si filter for extreme ultraviolet (EUV) spectral range is developed. A setup for measuring the sensitivity profile of detectors with spatial resolution better than 100 μm is fabricated. The optical properties of silicon photodiodes in the EUV and visible spectral ranges are investigated. Some characteristics of SPD-100UV diodes with Zr/Si coating and without it, as well as of AXUV-100 diodes, are compared. In all types of detectors a narrow region beyond the operating aperture is found to be sensitive to the visible light.

Keywords: EUV radiation, silicon photodiode, detector, EUV filter.

PACS: 85.60.Dw, 42.79.Pw

Received: 27.07.2012
Revised: 06.08.2012