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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 2012 Volume 42, Number 8, Pages 745–746 (Mi qe14906)

This article is cited in 3 papers

Laser applications and other topics in quantum electronics

Effect of gamma irradiation on emission characteristics of laser heterostructures

B. I. Makhsudov

Tajik National University, Dushanbe

Abstract: Changes in the threshold current and slope efficiency are studied under conditions of gamma-ray irradiation by injection InGaAsP/InP lasers emitting at 1.3 mm (irradiation dose is ~1014 — 1017 photon cm-2). We observed an improved performance at low values of the quantum flux density and degradation at doses greater than 1014 photon cm-2.

Keywords: injection laser, threshold current, slope efficiency, irradiation dose, gamma rays.

PACS: 42.55.Px, 42.60.Lh, 61.80.Ed

Received: 28.05.2012
Revised: 18.06.2012


 English version:
Quantum Electronics, 2012, 42:8, 745–746

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