RUS  ENG
Full version
JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 2012 Volume 42, Number 12, Pages 1073–1080 (Mi qe14983)

This article is cited in 1 paper

Special issue devoted to the 90th anniversary of N.G.Basov

N. G. Basov and early works on semiconductor lasers at P. N. Lebedev Physics Institute

P. G. Eliseev

Centre for High-Technology Materials, University of New Mexico, Albuquerque, USA

Abstract: A survey is presented of works on creation and investigation of semiconductor lasers during 1957 – 1977 at the P. N. Lebedev Physics Institute. Many of these works were initiated by N. G. Basov, starting from pre-laser time, when N. G. Basov and his coworkers formulated principal conditions of creation of lasers on interband transitions in semiconductors. Main directions of further works were diode lasers based on various materials and structures, their characteristics of output power, high-speed operation and reliability.

Keywords: N.G. Basov, semiconductor lasers, heterostructures, laser power, radiation dynamics.

PACS: 01.65.+g, 42.55.Px, 42.60.Lh

Received: 14.10.2012


 English version:
Quantum Electronics, 2012, 42:12, 1073–1080

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2025