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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 2013 Volume 43, Number 11, Pages 1009–1013 (Mi qe15127)

Lasers

Optimisation of optical properties of a long-wavelength GaInNAs quantum-well laser diode

M. S. Aliasa, A. N. Al-Omarib, F. Maskuriya, F. Faiza, S. M. Mitania

a Advanced Physical Technologies Laboratory, Telekom Malaysia Research & Development, Lingkaran Teknokrat Timur, Malaysia
b Electronic Engineering Department, Hijjawi Faculty for Engineering Technology, Yarmouk University, Jordan

Abstract: We report optimisation of optical properties of a strained GaInNAs/GaAs quantum-well laser, by taking into account the many-body effect theory and the bowing parameter. The theoretical transition energies and the GaInNAs bowing parameter are fitted into the photoluminescence spectrum of the GaInNAs quantum well, obtained in the experiment. The theoretical results for the photoluminescence spectrum and laser characteristics (light, current and voltage) exhibits a high degree of agreement with the experimental results.

Keywords: GaInNAs, edge emitting laser, laser diode.

PACS: 42.55.Tv, 42.55.Px, 73.61.Ey

Received: 22.01.2013


 English version:
Quantum Electronics, 2013, 43:11, 1009–1013

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© Steklov Math. Inst. of RAS, 2024