A. I. Zagumennyi, Yu. D. Zavartsev, P. A. Studenikin, V. I. Vlasov, I. A. Shcherbakov, C. P. Wyss, W. Luthy, H. P. Weber, P. A. Popov, “Thermal conductivity of a Tm3+:GdVO4 crystal and the operational characteristics of a microchip laser based on it”, Kvantovaya Elektronika, 1999, Volume 27, Number 1,Pages 16

This article is cited in 19 papers

Lasers

Thermal conductivity of a Tm³⁺:GdVO₄ crystal and the operational characteristics of a microchip laser based on it

A. I. Zagumennyi^a, Yu. D. Zavartsev^a, P. A. Studenikin^a, V. I. Vlasov^a, I. A. Shcherbakov^a, C. P. Wyss^b, W. Luthy^b, H. P. Weber^b, P. A. Popov^c

^a Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow
^b Institute of Applied Physics, University of Bern, Switzerland
^c I. G. Petrovsky Bryansk State Pedagogical University

Abstract: The thermal conductivity of a Tm³⁺:GdVO₄ crystal was measured in the temperature range 50 — 300 K. At a temperature of 300 K, the thermal conductivity along the c axis amounted to 9.7 W m^-1 K^-1, which is higher than the thermal conductivity of a Cr:Tm:Ho :YAG crystal. A maximum output power of 1.4 W (λ=1.915 μm) was attained in a Tm³⁺:GdVO₄ microchip laser for a lasing threshold of 5.7 W and a differential efficiency of 9.2%. A GdVO₄ array was found to have a number of advantages compared with other media for the fabrication of diode-pumped lasers.

PACS: 42.55.Rz, 42.55.Xi, 42.60.Jf, 66.70.+f

Received: 13.11.1998