V. Ya. Aleshkin, N. V. Dikareva, A. A. Dubinov, B. N. Zvonkov, M. V. Karzanova, K. E. Kudryavtsev, S. M. Nekorkin, A. N. Yablonskii, “Guiding effect of quantum wells in semiconductor lasers”, Kvantovaya Elektronika, 2013, Volume 43, Number 5,Pages <nobr>401

This article is cited in 6 papers

Semiconductor lasers. Physics and Technology

Guiding effect of quantum wells in semiconductor lasers

V. Ya. Aleshkin^a, N. V. Dikareva^b, A. A. Dubinov^a, B. N. Zvonkov^b, M. V. Karzanova^b, K. E. Kudryavtsev^a, S. M. Nekorkin^b, A. N. Yablonskii^a

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University

Abstract: The guiding effect of InGaAs quantum wells in GaAs- and InP-based semiconductor lasers has been studied theoretically and experimentally. The results demonstrate that such waveguides can be effectively used in laser structures with a large refractive index difference between the quantum well material and semiconductor matrix and a large number of quantum wells (e.g. in InP-based structures).

Keywords: semiconductor laser, quantum well, guiding effect.

PACS: 42.55.Px, 78.67.Hc, 42.82.Et

Received: 08.02.2013
Revised: 27.03.2013