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Kvantovaya Elektronika, 2013 Volume 43, Number 5, Pages 407–409 (Mi qe15156)

This article is cited in 15 papers

Semiconductor lasers. Physics and Technology

High-power 850–870-nm pulsed lasers based on heterostructures with narrow and wide waveguides

M. A. Ladugin, Yu. P. Koval', A. A. Marmalyuk, V. A. Petrovskii, T. A. Bagaev, A. Yu. Andreev, A. A. Padalitsa, V. A. Simakov

Polyus Research and Development Institute named after M. F. Stel'makh

Abstract: The power and spectral characteristics of pulsed laser diode arrays operating in the spectral range of 850—870 nm and based on heterostructures of two different types (with narrow and wide waveguides) are studied. It is found that the power—current characteristics of the laser arrays of both types are linear within the pump current range of 10—50 A and that the steepness of these characteristics decreases at currents exceeding 80 A. The decrease in the slope efficiency is more noticeable for laser arrays based on heterostructures with wide waveguides.

Keywords: laser diode array, MOVPE, heterostructure, heat generation.

PACS: 42.55.Px, 42.60.Da, 42.60.Lh, 78.66.-w

Received: 22.02.2013
Revised: 09.04.2013


 English version:
Quantum Electronics, 2013, 43:5, 407–409

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