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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 2013 Volume 43, Number 5, Pages 410–413 (Mi qe15157)

This article is cited in 4 papers

Semiconductor lasers. Physics and Technology

Diagnostics of the fine spectrum of a quantum well in laser heterostructures using ultrasonic deformation

L. A. Kulakovaa, N. S. Averkieva, A. N. Darinskiib, È. Z. Yakhkinda

a Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg
b Institute of Cristallography RAS, Moscow

Abstract: This paper describes a new acoustoelectronic effect in laser nanoheterostructures, which is caused by hole energy modulation and intermixing of hole wave functions in the quantum well of a laser structure in response to ultrasonic deformation. Experimental data are presented which indicate that the laser output intensity and polarisation direction vary periodically, with the acoustic wave period. Theoretical analysis of experimental data is used to assess parameters of the quantum well and the strain distribution in the heterostructure.

Keywords: acoustoelectronic interaction, heterostructure laser emission polarisation, hole states in a quantum well.

PACS: 42.55.Px, 78.66.-w, 43.35.Pt, 42.25.Ja

Received: 22.02.2013
Revised: 03.04.2013


 English version:
Quantum Electronics, 2013, 43:5, 410–413

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