E. V. Lutsenko, A. G. Voinilovich, N. V. Rzheutskii, V. N. Pavlovskii, G. P. Yablonskii, S. V. Sorokin, S. V. Gronin, I. V. Sedova, P. S. Kop'ev, S. V. Ivanov, M. Alanzi, A. Hamidalddin, A. Alyamani, “Optically pumped quantum-dot Cd(Zn)Se/ZnSe laser and microchip converter for yellow–green spectral region”, Kvantovaya Elektronika, 2013, Volume 43, Number 5,Pages <nobr>418

This article is cited in 13 papers

Semiconductor lasers. Physics and Technology

Optically pumped quantum-dot Cd(Zn)Se/ZnSe laser and microchip converter for yellow–green spectral region

E. V. Lutsenko^a, A. G. Voinilovich^a, N. V. Rzheutskii^a, V. N. Pavlovskii^a, G. P. Yablonskii^a, S. V. Sorokin^b, S. V. Gronin^b, I. V. Sedova^b, P. S. Kop'ev^b, S. V. Ivanov^b, M. Alanzi^c, A. Hamidalddin^c, A. Alyamani^c

^a B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Minsk
^b Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg
^c KACST, National Nanotechnology Center, Riyadh, Saudi Arabia

Abstract: The room temperature laser generation in the yellow—green (λ = 558.5—566.7 nm) spectral range has been demonstrated under optical pumping by a pulsed nitrogen laser of Cd(Zn)Se/ZnSe quantum dot heterostructures. The maximum achieved laser wavelength was as high as λ = 566.7 nm at a laser cavity length of 945 μm. High values of both the output pulsed power (up to 50 W) and the external differential quantum efficiency (~60%) were obtained at a cavity length of 435 μm. Both a high quality of the laser heterostructure and a low lasing threshold (~2 kW cm^-2) make it possible to use a pulsed InGaN laser diode as a pump source. A laser microchip converter based on this heterostructure has demonstrated a maximum output pulse power of ~90 mW at λ = 560 nm. The microchip converter was placed in a standard TO-18 (5.6 mm in diameter) laser diode package.

Keywords: semiconductor lasers, laser converter, optical pumping, yellow–green lasing.

PACS: 42.55.Px, 78.67.Hc, 42.60.Jf

Received: 27.02.2013