P. V. Gorlachuk, A. V. Ivanov, V. D. Kurnosov, K. V. Kurnosov, V. I. Romantsevich, V. A. Simakov, R. V. Chernov, “Simulation of power – current characteristics of high-power semiconductor lasers emitting in the range 1.5 – 1.55 μm”, Kvantovaya Elektronika, 2014, Volume 44, Number 2,Pages <nobr>149

This article is cited in 6 papers

Lasers

Simulation of power – current characteristics of high-power semiconductor lasers emitting in the range 1.5 – 1.55 μm

P. V. Gorlachuk, A. V. Ivanov, V. D. Kurnosov, K. V. Kurnosov, V. I. Romantsevich, V. A. Simakov, R. V. Chernov

Polyus Research and Development Institute named after M. F. Stel'makh, Moscow

Abstract: We report the simulation of power – current characteristics of high-power semiconductor lasers emitting in the range 1.5 – 1.55 μm. A technique is described which allows one to determine the thermal resistance and characteristic temperatures of a laser diode. The radiative and nonradiative carrier recombination rates are evaluated. Simulation results are shown to agree well with experimental data.

Keywords: power – current characteristic, spectral range 1.5 – 1.55 μm, thermal resistance, radiative and nonradiative carrier recombination.

PACS: 42.55.Px, 42.60.Jf, 42.60.Lh

Received: 05.06.2013
Revised: 21.06.2013