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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 2013 Volume 43, Number 12, Pages 1122–1126 (Mi qe15270)

This article is cited in 4 papers

Nonlinear optical phenomena

Optical limiting effects in nanostructured silicon carbide thin films

A. A. Borscha, V. N. Starkova, V. I. Volkova, V. I. Rudenkoa, A. Yu. Boyarchuka, A. V. Semenovb

a Institute of Physics, National Academy of Sciences of Ukraine, Kiev
b Institute for Single Crystals, National Academy of Sciences of Ukraine, Kharkov

Abstract: We present the results of experiments on the interaction of nanosecond laser radiation at 532 and 1064 nm with nanostructured silicon carbide thin films of different polytypes. We have found the effect of optical intensity limiting at both wavelengths. The intensity of optical limiting at λ = 532 nm (Icl ~106 W cm-2) is shown to be an order of magnitude less than that at λ = 1064 nm (Icl ~ 107 W cm-2). We discuss the nature of the nonlinearity, leading to the optical limiting effect. We have proposed a method for determining the amount of linear and two-photon absorption in material media.

Keywords: optical limiting, nanostructured films, silicon carbide, polytypes.

PACS: 78.66.-w, 42.65.-k

Received: 04.07.2013
Revised: 30.09.2013


 English version:
Quantum Electronics, 2013, 43:12, 1122–1126

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