P. V. Gorlachuk, Yu. L. Ryaboshtan, M. A. Ladugin, A. A. Padalitsa, A. A. Marmalyuk, V. D. Kurnosov, K. V. Kurnosov, O. V. Zhuravleva, V. I. Romantsevich, R. V. Chernov, A. V. Ivanov, V. A. Simakov, “1.5 to 1.6 μm pulsed laser diode bars based on epitaxially stacked AlGaInAs/InP heterostructures”, Kvantovaya Elektronika, 2013, Volume 43, Number 9,Pages <nobr>822

This article is cited in 2 papers

Lasers

1.5 to 1.6 μm pulsed laser diode bars based on epitaxially stacked AlGaInAs/InP heterostructures

P. V. Gorlachuk, Yu. L. Ryaboshtan, M. A. Ladugin, A. A. Padalitsa, A. A. Marmalyuk, V. D. Kurnosov, K. V. Kurnosov, O. V. Zhuravleva, V. I. Romantsevich, R. V. Chernov, A. V. Ivanov, V. A. Simakov

Open Joint-Stock Company M. F. Stel'makh Polyus Research Institute, Moscow

Abstract: This paper describes 1.55-μm pulsed laser diode bars based on epitaxially stacked double AlGaInAs/InP heterostructures. The output power of such bars is 1.8 times that of singleheterostructure laser diode bars. We present the key characteristics of the laser sources.

Keywords: metal-organic vapour phase epitaxy, laser diode bars, epitaxial stacking.

PACS: 42.55.Px, 42.60.Lh, 78.66.Fd

Received: 17.07.2013
Revised: 26.07.2013