High-power pulsed laser diodes emitting in the range 1.5 – 1.6 μm

This paper examines approaches for increasing the output pulse power of laser diodes based on MOVPE InGaAs/AlGaInAs/InP heterostructures and emitting in the range 1.5 – 1.6 μm. We demonstrate that optimising waveguide layer parameters may ensure an increase in the quantum efficiency of the laser diodes and a reduction in their internal optical loss. Characterisation results are presented for laser diodes based on the proposed heterostructures.