RUS  ENG
Full version
JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1999 Volume 28, Number 3, Pages 189–206 (Mi qe1566)

This article is cited in 6 papers

Review

Optoelectronic integrated circuits utilising vertical-cavity surface-emitting semiconductor lasers

S. D. Zakharov, V. B. Fyodorov, V. V. Tsvetkov

Institute of Microprocessor Computer Systems, Moscow

Abstract: Optoelectronic integrated circuits with additional optical inputs/outputs, in which vertical-cavity surface-emitting (VCSE) lasers perform the data transfer functions, are considered. The mutual relationship and the 'affinity' between optical means for data transfer and processing, on the one hand, and the traditional electronic component base, on the other, are demonstrated in the case of implementation of three-dimensional interconnects with a high transmission capacity. Attention is drawn to the problems encountered when semiconductor injection lasers are used in communication lines. It is shown what role can be played by VCSE lasers in solving these problems. A detailed analysis is made of the topics relating to possible structural and technological solutions in the fabrication of single lasers and of their arrays, and also of the problems hindering integrating of lasers into emitter arrays. Considerable attention is given to integrated circuits with optoelectronic smart pixels. Various technological methods for vertical integration of GaAs VCSE lasers with the silicon substrate of a microcircuit (chip) are discussed.

PACS: 42.55.Px, 42.82.Fv, 85.40.Xx

Received: 24.12.1998


 English version:
Quantum Electronics, 1999, 29:9, 745–761

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2024