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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 1999 Volume 29, Number 1, Pages 1–3 (Mi qe1586)

This article is cited in 6 papers

Letters to the editor

Phase-locking of a linear array of high-power laser diodes

V. V. Apollonov, S. I. Derzhavin, V. V. Kuz'minov, D. A. Mashkovskii, A. M. Prokhorov, V. N. Timoshkin, V. A. Filonenko

General Physics Institute, Russian Academy of Sciences, Moscow

Abstract: Continuous emission was obtained from a phase-locked (in an external cavity) linear array of laser diodes with a power in excess of 10 W. This was done by using an efficient heat sink based on a porous structure with a thermal resistance better than 0.3 °C W-1. For a power of 1.57 W, a divergence of the lobes was ~ 0.1 mrad in the plane of the p – n junction, corresponding to the diffraction limit at the radiation wavelength λ = 0.94 μm for an aperture of 1 cm. The promising trends in the development of technologies based on laser-diode arrays are considered.

PACS: 42.55.Px, 42.60.Jf

Received: 06.08.1999


 English version:
Quantum Electronics, 1999, 29:10, 839–841

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