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Kvantovaya Elektronika, 2015 Volume 45, Number 1, Pages 59–65 (Mi qe16101)

This article is cited in 51 papers

Fibre optics

Luminescence properties of IR-emitting bismuth centres in SiO2-based glasses in the UV to near-IR spectral region

E. G. Firstovaa, I. A. Bufetovba, V. F. Khopinc, V. V. Vel'miskina, S. V. Firstova, G. A. Bufetovad, K. N. Nishcheve, A. N. Gur'yanovc, E. M. Dianova

a Fiber Optics Research Center of the Russian Academy of Sciences, Moscow
b Moscow Institute of Physics and Technology (State University), Dolgoprudny, Moscow region
c Institute of Chemistry of High-Purity Substances RAS, Nizhnii Novgorod
d A. M. Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow
e Ogarev Mordovia State University

Abstract: We have studied UV excitation spectra of IR luminescence in bismuth-doped glasses of various compositions and obtained energy level diagrams of IR-emitting bismuth-related active centres (BACs) associated with silicon and germanium atoms up to ~5.2 eV over the ground level. A possible energy level diagram of the BACs in phosphosilicate glass has been proposed. The UV excitation peaks for the IR luminescence of the BACs in the glasses have been shown to considerably overlap with absorption bands of the Bi3+ ion, suggesting that Bi3+ may participate in BAC formation.

Keywords: optical fibre, bismuth, bismuth centres, luminescence.

PACS: 42.81.Cn, 78.60.Lc

Received: 15.07.2014


 English version:
Quantum Electronics, 2015, 45:1, 59–65

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