K. A. Kovalevsky, N. V. Abrosimov, R. Kh. Zhukavin, S. G. Pavlov, H. -W. Hübers, V. V. Tsyplenkov, V. N. Shastin, “Terahertz lasers based on intracentre transitions of group V donors in uniaxially deformed silicon”, Kvantovaya Elektronika, 2015, Volume 45, Number 2,Pages <nobr>113

This article is cited in 6 papers

Terahertz radiation

Terahertz lasers based on intracentre transitions of group V donors in uniaxially deformed silicon

K. A. Kovalevsky^a, N. V. Abrosimov^b, R. Kh. Zhukavin^a, S. G. Pavlov^c, H. -W. Hübers^dc, V. V. Tsyplenkov^a, V. N. Shastin^ea

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Institute for Crystal Growth, Germany
^c Institute of Planetary Research, German Aerospace Center
^d Institut für Optik und Atomare Physik, Technische Universität Berlin, Germany
^e N. I. Lobachevski State University of Nizhni Novgorod

Abstract: This paper presents a brief overview of available experimental data on the characteristics of stimulated terahertz emission (4.9 – 6.4 THz) from optically excited neutral group V donors (phosphorus, antimony, arsenic and bismuth) in crystalline silicon subjected to uniaxially compressive strain along the [100] axis. Strain is shown to have a significant effect on the characteristics in question. Optimal strain depends on the dopant and may reduce the threshold pump intensity and improve lasing efficiency. We discuss possible mechanisms behind this effect and estimate the limiting output emission parameters.

Keywords: silicon laser, uniaxial deformation, terahertz radiation.

PACS: 42.55.Px, 07.57.Hm, 78.45.th

Received: 14.04.2014