RUS  ENG
Full version
JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 2015 Volume 45, Number 7, Pages 597–600 (Mi qe16208)

This article is cited in 20 papers

Lasers

Effect of laser cavity parameters on saturation of light – current characteristics of high-power pulsed lasers

D. A. Veselov, N. A. Pikhtin, A. V. Lyutetskiy, D. N. Nikolaev, S. O. Slipchenko, Z. N. Sokolova, V. V. Shamakhov, I. S. Shashkin, V. A. Kapitonov, I. S. Tarasov

Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg

Abstract: We report an experimental study of power characteristics of semiconductor lasers based on MOVPE-grown asymmetric separate-confinement heterostructures with a broadened waveguide as functions of cavity length, stripe contact width and mirror reflectivities. It is shown that at high current pump levels, the variation of the cavity parameters of a semiconductor laser (width, length and mirror reflectivities) influences the light – current (L – I) characteristic saturation and maximum optical power by affecting such laser characteristics, as the current density and the optical output loss. A model is elaborated and an optical power of semiconductor lasers is calculated by taking into account the dependence of the internal optical loss on pump current density and concentration distribution of charge carriers and photons along the cavity axis of the cavity. It is found that only introduction of the dependence of the internal optical loss on pump current density to the calculation model provides a good agreement between experimental and calculated L – I characteristics for all scenarios of variations in the laser cavity parameters.

Keywords: semiconductor laser, internal optical loss, pulse pumping.

PACS: 42.55.Px, 42.60.Da, 42.60.Lh

Received: 29.12.2014


 English version:
Quantum Electronics, 2015, 45:7, 597–600

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2024