N. A. Gamov, E. V. Zhdanova, M. M. Zverev, D. V. Peregudov, V. B. Studenov, A. V. Mazalov, V. A. Kureshov, D. R. Sabitov, A. A. Padalitsa, A. A. Marmalyuk, “Pulsed electron-beam-pumped laser based on AlGaN/InGaN/GaN quantum-well heterostructure”, Kvantovaya Elektronika, 2015, Volume 45, Number 7,Pages <nobr>601

This article is cited in 6 papers

Lasers

Pulsed electron-beam-pumped laser based on AlGaN/InGaN/GaN quantum-well heterostructure

N. A. Gamov^a, E. V. Zhdanova^a, M. M. Zverev^a, D. V. Peregudov^a, V. B. Studenov^a, A. V. Mazalov^b, V. A. Kureshov^b, D. R. Sabitov^b, A. A. Padalitsa^b, A. A. Marmalyuk^bc

^a Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University)
^b Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
^c National Engineering Physics Institute "MEPhI", Moscow

Abstract: The parameters of pulsed blue-violet (λ ≈ 430 nm at T = 300 K) lasers based on an AlGaN/InGaN/GaN structure with five InGaN quantum wells and transverse electron-beam pumping are studied. At room temperature of the active element, the minimum electron energy was 9 keV and the minimum threshold electron beam current density was 8 A cm^-2 at an electron energy of 18 keV.

Keywords: electron-beam-pumped laser, quantum-well structure, quantum well.

PACS: 42.55.Px, 41.75.Fr, 85.35.Be, 42.60.Lh

Received: 09.02.2015
Revised: 27.03.2015