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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 2015 Volume 45, Number 10, Pages 879–883 (Mi qe16263)

This article is cited in 2 papers

Lasers

Optimisation of cavity parameters for lasers based on AlGaInAsP/InP solid solutions (λ=1470 nm)

D. A. Veselov, K. R. Ayusheva, I. S. Shashkin, K. V. Bakhvalov, V. V. Vasil'eva, L. S. Vavilova, A. V. Lyutetskiy, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, I. S. Tarasov

Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg

Abstract: We have studied the effect of laser cavity parameters on the light–current characteristics of lasers based on the AlGaInAs/GaInAsP/InP solid solution system that emit in the spectral range 1400–1600 nm. It has been shown that optimisation of cavity parameters (chip length and front facet reflectivity) allows one to improve heat removal from the laser, without changing other laser characteristics. An increase in the maximum output optical power of the laser by 0.5 W has been demonstrated due to cavity design optimisation.

Keywords: semiconductor laser, saturation of the light–current characteristic, Auger recombination, laser cavity.

PACS: 42.55.Px, 42.60.Da, 42.60.Jf

Received: 24.04.2015
Revised: 17.07.2015


 English version:
Quantum Electronics, 2015, 45:10, 879–883

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