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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 2015 Volume 45, Number 12, Pages 1091–1097 (Mi qe16292)

This article is cited in 17 papers

Lasers

Integrated high-order surface diffraction gratings for diode lasers

V. V. Zolotarev, A. Yu. Leshko, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, Ya. V. Lubyanskiy, N. V. Voronkova, I. S. Tarasov

Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg

Abstract: High-order surface diffraction gratings acting as a distributed Bragg reflector (DBR) in mesa stripe semiconductor lasers (λ = 1030 nm) have been studied theoretically and experimentally. Higher order interfering radiation modes (IRMs), which propagate off the plane of the waveguide, have been shown to have a crucial effect on the reflection and transmission spectra of the DBR. The decrease in the reflectivity of the DBR in response to the increase in the diffraction efficiency of these modes may reach 80% and more. According to theoretical analysis results, the intensity of the higher order IRMs is determined by the geometry of the DBR groove profile. Experimental data demonstrate that the noncavity modes are responsible for parasitic light leakage losses in the laser cavity. It has been shown that, in the case of nonoptimal geometry of the grating groove profile, the overall external differential quantum efficiency of the parasitic laser emission may exceed 45%, which is more than half of the laser output power. The optimal geometry of the DBR groove profile is trapezoidal, with the smallest possible lower base. Experimental evidence has been presented that this geometry considerably reduces the power of the higher order IRMs and minimises the parasitic light leakage loss.

Keywords: semiconductor lasers, distributed feedback, Bragg gratings.

PACS: 42.55.Px, 42.60.Da, 42.82.Gw

Received: 04.06.2015
Revised: 31.08.2015


 English version:
Quantum Electronics, 2015, 45:12, 1091–1097

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