I. I. Zasavitskii, A. N. Zubov, A. Yu. Andreev, T. A. Bagaev, P. V. Gorlachuk, M. A. Ladugin, A. A. Padalitsa, A. V. Lobintsov, S. M. Sapozhnikov, A. A. Marmalyuk, “Quantum cascade laser based on GaAs/Al0.45Ga0.55As heteropair grown by MOCVD”, Kvantovaya Elektronika, 2016, Volume 46, Number 5,Pages 447

This article is cited in 4 papers

Lasers

Quantum cascade laser based on GaAs/Al_0.45Ga_0.55As heteropair grown by MOCVD

I. I. Zasavitskii^ab, A. N. Zubov^ab, A. Yu. Andreev^c, T. A. Bagaev^c, P. V. Gorlachuk^c, M. A. Ladugin^c, A. A. Padalitsa^c, A. V. Lobintsov^c, S. M. Sapozhnikov^c, A. A. Marmalyuk^bc

^a P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
^b Moscow Engineering Physics Institute (National Nuclear Research University)
^c Polyus Research and Development Institute named after M. F. Stel'makh, Moscow

Abstract: A pulsed quantum cascade laser emitting in the wavelength range 9.5–9.7 μm at 77.4 K is developed based on the GaAs/Al_0.45Ga_0.55As heteropair. The laser heterostructure was grown by MOCVD. The threshold current density was 1.8 kA cm^-2. The maximum output power of the laser with dimensions of 30 μm × 3 mm and with cleaved mirrors exceeded 200 mW.

Keywords: quantum cascade laser, MOCVD, GaAs/AlGaAs heteropair, mid-IR spectral region.

Received: 20.02.2016