M. V. Bogdanovich, V. P. Duraev, V. S. Kalinov, O. E. Kostik, K. I. Lantsov, K. V. Lepchenkov, V. V. Mashko, A. G. Ryabtsev, G. I. Ryabtsev, L. L. Teplyashin, “Transversely diode-pumped Q-switched Nd : YAG laser with injection of radiation from a single-frequency semiconductor laser”, Kvantovaya Elektronika, 2016, Volume 46, Number 10,Pages <nobr>870

This article is cited in 3 papers

Lasers, active media

Transversely diode-pumped Q-switched Nd : YAG laser with injection of radiation from a single-frequency semiconductor laser

M. V. Bogdanovich^a, V. P. Duraev^b, V. S. Kalinov^a, O. E. Kostik^a, K. I. Lantsov^a, K. V. Lepchenkov^a, V. V. Mashko^a, A. G. Ryabtsev^a, G. I. Ryabtsev^a, L. L. Teplyashin^a

^a B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Minsk
^b "Nolatech" Joint-Stock Company, Moscow

Abstract: A Q-switched Nd : YAG laser with a high-power transverse diode pumping and injection of seed radiation generated by a single-frequency semiconductor laser is described. The threshold seed radiation power at which the Q-switched Nd : YAG switches to the single-frequency mode is 0.44 mW (radiation intensity 5.6 × 10^-2 W cm^-2). With increasing injection power, the spectral and power characteristics of the Q-switched laser almost do not change at a constant excitation of its active medium. The spectral linewidth of the Q-switched Nd : YAG laser with injection from a TLD-1060-14BF single-frequency semiconductor laser module does not exceed 90 MHz (wavelength 1064 nm).

Keywords: solid-state laser, diode pumping, semiconductor laser module, injection of narrowband radiation.

Received: 22.06.2016