V. V. Bezotosnyi, A. A. Kozyrev, N. S. Kondakova, S. A. Kondakov, O. N. Krokhin, G. T. Mikayelyan, V. A. Oleshchenko, Yu. M. Popov, E. A. Cheshev, “Quasi-cw 808-nm 300-W laser diode arrays”, Kvantovaya Elektronika, 2017, Volume 47, Number 1,Pages <nobr>5

This article is cited in 4 papers

Lasers

Quasi-cw 808-nm 300-W laser diode arrays

V. V. Bezotosnyi^ab, A. A. Kozyrev^c, N. S. Kondakova^c, S. A. Kondakov^c, O. N. Krokhin^ab, G. T. Mikayelyan^bc, V. A. Oleshchenko^a, Yu. M. Popov^ab, E. A. Cheshev^ab

^a P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
^b Moscow Engineering Physics Institute (National Nuclear Research University)
^c Inject Ltd., Saratov

Abstract: Samples of 808-nm quasi-cw laser diode arrays (LDAs) with an output power exceeding 300 W, a pulse duration of 200 μs, and a pulse repetition rate of 100 Hz are developed and fabricated. The main output parameters of a set of five LDAs, including light–current characteristics, current–voltage characteristics, and emission spectra are measured. Preliminary life tests show that the LDA power remains stable for 10⁸ pulses.

Keywords: laser diode arrays, quasi-cw regime, emission power, service life, C–S mount, efficiency.

Received: 02.12.2016