A. A. Marmalyuk, Yu. L. Ryaboshtan, P. V. Gorlachuk, M. A. Ladugin, A. A. Padalitsa, S. O. Slipchenko, A. V. Lyutetskiy, D. A. Veselov, N. A. Pikhtin, “Semiconductor AlGaInAs/InP lasers with ultra-narrow waveguides”, Kvantovaya Elektronika, 2017, Volume 47, Number 3,Pages <nobr>272

This article is cited in 25 papers

Lasers

Semiconductor AlGaInAs/InP lasers with ultra-narrow waveguides

A. A. Marmalyuk^ab, Yu. L. Ryaboshtan^a, P. V. Gorlachuk^a, M. A. Ladugin^a, A. A. Padalitsa^a, S. O. Slipchenko^c, A. V. Lyutetskiy^c, D. A. Veselov^c, N. A. Pikhtin^c

^a "Sigm Plyus" Ltd., Moscow
^b Moscow Engineering Physics Institute (National Nuclear Research University)
^c Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg

Abstract: Laser diodes based on AlGaInAs/InP heterostructures with an ultra-narrow waveguide are developed. It is shown that the use of this waveguide in conjunction with profiled doping ensures a balance between internal optical losses and heat resistance. Laser diodes with a stripe contact 100 μm wide demonstrate at room temperature an output optical power exceeding 4 W in a continuouswave mode and exceeding 20 W in a pulsed mode.

Keywords: AlGaInAs/InP heterostructure, MOVPE, laser diode, eye-safe spectral region.

Received: 30.01.2017