M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, T. A. Bagaev, A. Yu. Andreev, K. Yu. Telegin, A. V. Lobintsov, E. I. Davydova, S. M. Sapozhnikov, A. I. Danilov, A. V. Podkopaev, E. B. Ivanova, V. A. Simakov, “Laser diode bars based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 70%”, Kvantovaya Elektronika, 2017, Volume 47, Number 4,Pages <nobr>291

This article is cited in 11 papers

Letters

Laser diode bars based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 70%

M. A. Ladugin^a, A. A. Marmalyuk^ab, A. A. Padalitsa^a, T. A. Bagaev^a, A. Yu. Andreev^a, K. Yu. Telegin^a, A. V. Lobintsov^a, E. I. Davydova^a, S. M. Sapozhnikov^a, A. I. Danilov^a, A. V. Podkopaev^a, E. B. Ivanova^a, V. A. Simakov^a

^a Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
^b Moscow Engineering Physics Institute (National Nuclear Research University)

Abstract: The results of the development and fabrication of laser diode bars (λ = 800 – 810 nm) based on AlGaAs/GaAs quantumwell heterostructures with a high efficiency are presented. An increase in the internal quantum and external differential efficiencies together with a decrease in the working voltage and the series resistance allowed us to improve the output parameters of the semiconductor laser under quasi-cw pumping. The output power of the laser diode bars with a 5-mm transverse length reached 210 W, and the efficiency was ~70%.

Keywords: laser diode bars, efficiency, quantum-well heterostructures, MOCVD, AlGaAs/GaAs.

Received: 17.03.2017