A. I. Chumakov, M. P. Belova, L. N. Kessarinsky, A. Ya. Borisov, K. A. Ivanov, I. N. Tsymbalov, R. V. Volkov, A. B. Savel'ev, L. I. Galanina, N. P. Chirskaya, L. S. Novikov, “Ionisation response in semiconductor structures exposed to the X-ray radiation of a femtosecond laser-plasma source”, Kvantovaya Elektronika, 2017, Volume 47, Number 6,Pages <nobr>528

This article is cited in 1 paper

Interaction of laser radiation with matter. Laser plasma

Ionisation response in semiconductor structures exposed to the X-ray radiation of a femtosecond laser-plasma source

A. I. Chumakov^ab, M. P. Belova^b, L. N. Kessarinsky^a, A. Ya. Borisov^a, K. A. Ivanov^cde, I. N. Tsymbalov^ce, R. V. Volkov^ce, A. B. Savel'ev^ce, L. I. Galanina^f, N. P. Chirskaya^f, L. S. Novikov^f

^a JSC 'ENGOs SPELS', Moscow
^b Moscow Engineering Physics Institute (National Nuclear Research University)
^c International Laser Center of Moscow State University
^d P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
^e Faculty of Physics, Lomonosov Moscow State University
^f Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics

Abstract: The possibilities of applying a femtosecond laser-plasma source of X-ray radiation for modelling the effect of single nuclear particles based on the principle of equivalent charge generation are analysed. The parameters of femtosecond X-ray radiation for the experimental modelling of individual radiation effects are validated. The experimental setup forming the X-ray radiation is described. The results of comparative ionisation response modelling in simple electronic devices using the FLUKA and FEANT codes are presented.

Keywords: X-ray radiation, femtosecond laser plasma, single event effects, semiconductor devices.

Received: 17.03.2017
Revised: 11.05.2017