M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, K. Yu. Telegin, A. V. Lobintsov, S. M. Sapozhnikov, A. I. Danilov, A. V. Podkopaev, V. A. Simakov, “Laser diode arrays based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 62%”, Kvantovaya Elektronika, 2017, Volume 47, Number 8,Pages <nobr>693

This article is cited in 5 papers

Lasers

Laser diode arrays based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 62%

M. A. Ladugin^a, A. A. Marmalyuk^ab, A. A. Padalitsa^a, K. Yu. Telegin^a, A. V. Lobintsov^a, S. M. Sapozhnikov^a, A. I. Danilov^a, A. V. Podkopaev^a, V. A. Simakov^a

^a Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
^b Moscow Engineering Physics Institute (National Nuclear Research University)

Abstract: The results of development of quasi-cw laser diode arrays operating at a wavelength of 808 nm with a high efficiency are demonstrated. The laser diodes are based on semiconductor AlGaAs/GaAs quantum-well heterostructures grown by MOCVD. The measured spectral, spatial, electric and power characteristics are presented. The output optical power of the array with an emitting area of 5 × 10 mm is 2.7 kW at a pump current of 100 A, and the maximum efficiency reaches 62%.

Keywords: laser diode arrays, efficiency, quantum-well heterostructures, MOCVD, AlGaAs/GaAs.

Received: 31.05.2017