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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 2000 Volume 30, Number 2, Pages 152–157 (Mi qe1677)

This article is cited in 2 papers

Invited paper

Analysis of absorption and amplification in a unipolar semiconductor structure with quantum dots

P. G. Eliseev

P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow

Abstract: The allowed intraband optical transitions in a quantum dot are considered in the context of their application in quantum-well IR detectors and unipolar semiconductor lasers. The atom-like quantum dot is described by using the harmonic oscillator model. An expression is obtained for the absorption cross section which is independent of the wavelength and the quantum-dot size. Optical absorption and amplification are estimated.

PACS: 42.55.Px, 73.20.Dx, 85.30.Vw

Received: 21.06.1999


 English version:
Quantum Electronics, 2000, 30:2, 152–157

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© Steklov Math. Inst. of RAS, 2025