A. A. Marmalyuk, Yu. L. Ryaboshtan, P. V. Gorlachuk, M. A. Ladugin, A. A. Padalitsa, S. O. Slipchenko, A. V. Lyutetskiy, D. A. Veselov, N. A. Pikhtin, “Effect of the waveguide layer thickness on output characteristics of semiconductor lasers with emission wavelength from 1500 to 1600 nm”, Kvantovaya Elektronika, 2018, Volume 48, Number 3,Pages <nobr>197

This article is cited in 13 papers

Lasers and amplifiers

Effect of the waveguide layer thickness on output characteristics of semiconductor lasers with emission wavelength from 1500 to 1600 nm

A. A. Marmalyuk^ab, Yu. L. Ryaboshtan^a, P. V. Gorlachuk^a, M. A. Ladugin^a, A. A. Padalitsa^a, S. O. Slipchenko^c, A. V. Lyutetskiy^c, D. A. Veselov^c, N. A. Pikhtin^c

^a "Sigm Plyus" Ltd., Moscow
^b National Engineering Physics Institute "MEPhI", Moscow
^c Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg

Abstract: The effect of the waveguide layer thickness on output characteristics of AlGaInAs/InP quantum-well semiconductor lasers is analysed. The samples of semiconductor lasers with narrow and wide waveguides are experimentally fabricated. Their comparison is carried out and the advantages of particular constructions depending on the current pump are demonstrated.

Keywords: semiconductor laser, heterostructure, AlGaInAs/InP, output power.

Received: 20.10.2017
Revised: 25.12.2017