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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 2018 Volume 48, Number 6, Pages 495–501 (Mi qe16840)

This article is cited in 11 papers

Lasers

Experimental studies of 1.5–1.6 μm high-power asymmetricwaveguide single-mode lasers

P. V. Gorlachuk, A. V. Ivanov, V. D. Kurnosov, K. V. Kurnosov, A. A. Marmalyuk, V. I. Romantsevich, V. A. Simakov, R. V. Chernov

Polyus Research and Development Institute named after M. F. Stel'makh, Moscow

Abstract: The current–voltage, power–current, and spectral characteristics of high-power single-mode semiconductor lasers emitting at wavelengths of 1.5–1.6 μm are studied experimentally. It is shown that a laser with a cavity length of 1.6 mm and a mesa-stripe width of 3 μm mounted in a housing 11 mm in diameter may emit a power higher than 300 mW. Mounting of lasers on C-mounts makes it possible to achieve powers exceeding 400 mW. In the case of mounting in standard 14 pin DIL packages, the laser power at the exit of a single-mode fibre-optic cable (FOC) was no lower than 100 mW, which, taking into account 50% losses upon radiation coupling into the FOC, corresponds to the laser diode power higher than 200 mW. It is shown that the differential resistance of a laser depends not only on the laser crystal length but also on the type of mounting (in copper housings 11 mm in diameter or on C-mounts). The dependences of the laser wavelength and spectral width on the pump current and ambient temperature are presented. The characteristic temperatures of laser diodes are determined.

Keywords: mesa-stripe structure, high-power laser diode, singlemode lasing, laser diode characteristics, radiation spectral width.

Received: 05.02.2018
Revised: 09.04.2018


 English version:
Quantum Electronics, 2018, 48:6, 495–501

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© Steklov Math. Inst. of RAS, 2024