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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 2018 Volume 48, Number 8, Pages 686–690 (Mi qe16881)

This article is cited in 4 papers

Lasers

Nanosecond room-temperature Fe : ZnSe laser pumped inside the resonator of a transversely diode-pumped Er : YLF laser

V. I. Kozlovskyab, Yu. V. Korostelina, Ya. K. Skasyrskya, M. P. Frolova

a P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow
b National Engineering Physics Institute "MEPhI", Moscow

Abstract: Lasing at room temperature is obtained in a Fe : ZnSe crystal installed as a passive Q-switch in a diode-pumped Er : YLF laser resonator. A miniresonator of the Fe : ZnSe laser is formed by mirrors pressed against the optical surfaces of the crystal with high reflectivities at λ = 4–4.5 μm and a high transmittance for the Er : YLF laser generation lines. In the Er : YLF laser resonator, short pulses of ~100 ns duration at λ = 2.65 μm are generated, stipulated by passive Q-switching of the resonator by the Fe : ZnSe crystal. The absorption of the Er : YLF laser radiation in the Fe : ZnSe crystal leads to the pumping of Fe : ZnSe laser, which generates pulses with a duration of less than 50 ns and an energy of ~0.5 μJ at λ = 4.2 μm. The laser operates in the pulse-periodic pump regime with a repetition rate up to 200 Hz.

Keywords: mid-IR range, II–VI crystals, Fe : ZnSe laser, Er : YLF laser, passive Q-switching, intracavity pumping.

Received: 08.05.2018
Revised: 24.05.2018


 English version:
Quantum Electronics, 2018, 48:8, 686–690

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