Compact laser diode array based on epitaxially integrated AlGaAs/GaAs heterostructures

The main results of the development of compact laser diode mini-arrays operating under 875-nm pulsed pumping are presented and the instrumental characteristics of these arrays are studied. Specific features of these sources, in addition to a high output power (~1.5 kW), are a narrow directional pattern (angular divergence 21° × 8°) and a small emitting area (less than 1 mm²). The use of serially integrated AlGaAs/GaAs MOCVD heterostructures with three emitting regions to develop laser diode arrays allowed us to improve their working parameters.