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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 2000 Volume 30, Number 3, Pages 261–262 (Mi qe1700)

This article is cited in 2 papers

Laser applications and other topics in quantum electronics

Luminescence of Cr4+:Ca2GeO4 films in the near infrared region

O. N. Gorshkova, E. M. Dianovb, N. B. Zvonkova, G. A. Maksimova, V. N. Protopopovb, Yu. I. Chigirinskiia

a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University
b Fiber Optics Research Center of the Russian Academy of Sciences, Moscow

Abstract: The Cr4+:Ca2GeO4 films are produced on fused silica substrates by the method of RF magnetron sputtering. Both initial films and those annealed in air at temperatures below 700°C are amorphous. The films annealed at temperatures from 500 to 700°C exhibit luminescence in the wavelength range from 1200 to 1400 nm upon laser excitation at 980 nm, which suggests that they contain tetravalent chromium ions.

PACS: 81.15.Cd, 78.55.Hx

Received: 19.10.1999


 English version:
Quantum Electronics, 2000, 30:3, 261–262

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