A. A. Marmalyuk, A. V. Ivanov, V. D. Kurnosov, K. V. Kurnosov, M. A. Ladugin, A. V. Lobintsov, A. A. Padalitsa, V. I. Romantsevich, Yu. L. Ryaboshtan, S. M. Sapozhnikov, V. N. Svetogorov, V. A. Simakov, “AlGaInAs/InP semiconductor lasers with an increased electron barrier”, Kvantovaya Elektronika, 2019, Volume 49, Number 6,Pages <nobr>519

This article is cited in 1 paper

Selection of papers presented at the Symposium 'Semiconductor Lasers: Physics and Technology'

AlGaInAs/InP semiconductor lasers with an increased electron barrier

A. A. Marmalyuk, A. V. Ivanov, V. D. Kurnosov, K. V. Kurnosov, M. A. Ladugin, A. V. Lobintsov, A. A. Padalitsa, V. I. Romantsevich, Yu. L. Ryaboshtan, S. M. Sapozhnikov, V. N. Svetogorov, V. A. Simakov

Polyus Research and Development Institute named after M. F. Stel'makh, Moscow

Abstract: This paper presents an experimental study of AlGaInAs/InP semiconductor lasers with different barrier layers. The use of strained layers with an increased band gap as blocking barriers limiting carrier leakage is shown to increase the output power of the lasers at a given pump current.

Keywords: semiconductor laser, heterostructure, AlGaInAs/InP, electron barrier.

Received: 04.04.2019