M. A. Fadeev, A. A. Dubinov, V. Ya. Aleshkin, V. V. Rumyantsev, V. V. Utochkin, V. I. Gavrilenko, F. Teppe, H.-W. Hübers, N. N. Mikhailov, S. A. Dvoretskii, S. V. Morozov, “Effect of Cd content in barriers on the threshold energy of Auger recombination in waveguide structures with HgTe/CdxHg1-xTe quantum wells, emitting at a wavelength of 18 μm”, Kvantovaya Elektronika, 2019, Volume 49, Number 6,Pages 556

This article is cited in 2 papers

Selection of papers presented at the Symposium 'Semiconductor Lasers: Physics and Technology'

Effect of Cd content in barriers on the threshold energy of Auger recombination in waveguide structures with HgTe/Cd_xHg_1-xTe quantum wells, emitting at a wavelength of 18 μm

M. A. Fadeev^ab, A. A. Dubinov^a, V. Ya. Aleshkin^a, V. V. Rumyantsev^a, V. V. Utochkin^a, V. I. Gavrilenko^a, F. Teppe^b, H.-W. Hübers^c, N. N. Mikhailov^d, S. A. Dvoretskii^d, S. V. Morozov^a

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Laboratoire Charles Coulomb, Universite Montpellier, France
^c Institut für Physik, Humboldt-Universität zu Berlin, Germany
^d Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: The threshold energy of Auger recombination in HgTe/Cd_xHg_1-xTe heterostructures with quantum wells (QWs) is analysed numerically for different compositions of the solid solution in barriers. It is demonstrated that the threshold energy depends nonmonotonically on the cadmium content in barriers and reaches a maximum at x ≈0.6–0.7. A comparison of the results of numerical calculations with experimental data on the temperature quenching of stimulated emission in a Cd_0.1Hg_0.9Te/Cd_0.65Hg_0.35Te structure gives grounds to expect a more than twofold increase in the quenching temperature of stimulated emission in structures with pure HgTe QWs and barriers with a high (~0.6) cadmium content.

Keywords: threshold energy, Auger recombination, HgCdTe.

Received: 04.04.2019