A. Yu. Andreev, T. A. Bagaev, M. R. Butaev, N. A. Gamov, E. V. Zhdanova, M. M. Zverev, V. I. Kozlovsky, Ya. K. Skasyrsky, I. V. Yarotskaya, “Investigation of an electron-beam pumped VECSEL based on an InGaAs/AlGaAs heterostructure”, Kvantovaya Elektronika, 2019, Volume 49, Number 10,Pages <nobr>909

This article is cited in 1 paper

Lasers

Investigation of an electron-beam pumped VECSEL based on an InGaAs/AlGaAs heterostructure

A. Yu. Andreev^a, T. A. Bagaev^a, M. R. Butaev^bc, N. A. Gamov^d, E. V. Zhdanova^d, M. M. Zverev^db, V. I. Kozlovsky^bc, Ya. K. Skasyrsky^b, I. V. Yarotskaya^a

^a Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
^b P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow
^c National Engineering Physics Institute "MEPhI", Moscow
^d MIREA — Russian Technological University, Moscow

Abstract: We report the results of a study of an e-beam pumped vertical-external-cavity surface-emitting laser (VECSEL) based on an InGaAs/AlGaAs heterostructure. Metalorganic chemical vapour deposition (MOCVD) is employed to grow two structures of different design, which contain 10 quantum wells (QWs) and a built-in distributed Bragg reflector (DBR) mirror. Under repetitively pulsed electron-beam excitation (50 Hz, 250 ns), a peak output power of 5.5 W is achieved at a wavelength of 2.5 W and an output power of 2.5 W at 1.013 μm with a total convergence angle no larger than 20 mrad.

Keywords: VECSEL, InGaAs/AlGaAs MQW heterostructure with a DBR mirror, e-beam pumping.

Received: 23.05.2019