Continuous-wave laser diodes based on epitaxially integrated InGaAs/AlGaAs/GaAs heterostructures

We report the results of the development and investigation of the main characteristics of integrated laser emitters for the spectral range from 1040 to 1080 nm. These devices are fabricated using epitaxially integrated InGaAs/AlGaAs/GaAs heterostructures with one or two emitting regions, and measurements are performed in pulsed, quasi-continuous, and continuous-wave pump regimes. It is found that along with the obvious advantage of integrated emitters – an increase in the output optical power, they also have a significant limitation, which consists in increasing the amount of released heat. Despite this, it is shown that such integrated double laser diodes operate efficiently in the continuouswave generation regime (P_max ~ 6 W), demonstrating a 1.7-fold increase in the differential quantum efficiency as compared to single laser diodes.