Capabilities of GaN/AlN/GaN structures as high-intensity pyroelectric laser sensors

The use of transparent Al₂O₃ /GaN/AlN/GaN structures as pyrometric sensors for measuring the parameters of high-intensity laser pulses is proposed. The peculiarities of the employment of such sensors in laser fusion facilities are analysed. Post-pulse distributions of the absorbed energy density are obtained for various parameters of both GaN layers. The local maxima of these distributions are minimised by varying the ratio of donor concentration and the ratio of their thicknesses under the condition of invariance of the total absorbed energy. The optimal structure configuration is established in terms of reducing the possible negative effect of laser impact on the pyroelectric coefficient stability.