T. A. Bagaev, M. A. Ladugin, A. A. Padalitsa, A. A. Marmalyuk, Yu. V. Kurnyavko, A. V. Lobintsov, A. I. Danilov, S. M. Sapozhnikov, V. V. Krichevskii, M. V. Zverkov, V. P. Konyaev, V. A. Simakov, S. O. Slipchenko, A. A. Podoskin, N. A. Pikhtin, “Double integrated laser-thyristor”, Kvantovaya Elektronika, 2019, Volume 49, Number 11,Pages <nobr>1011

This article is cited in 6 papers

Lasers

Double integrated laser-thyristor

T. A. Bagaev^a, M. A. Ladugin^a, A. A. Padalitsa^a, A. A. Marmalyuk^a, Yu. V. Kurnyavko^a, A. V. Lobintsov^a, A. I. Danilov^a, S. M. Sapozhnikov^a, V. V. Krichevskii^a, M. V. Zverkov^a, V. P. Konyaev^a, V. A. Simakov^a, S. O. Slipchenko^b, A. A. Podoskin^b, N. A. Pikhtin^b

^a IRE-Polus Research and Technology Association, Fryazino, Moscow
^b Ioffe Institute, St. Petersburg

Abstract: Comparative experiments are performed on a semiconductor laser with different numbers (one or two) of emitting sections monolithically integrated with an electronic switch (thyristor). It is shown that the functional integration of a laser with a thyristor in one heterostructure makes it possible to achieve efficient operation of the laser in a pulsed regime (up to 50 W), while the use of vertical integration of two laser sections in this device additionally increases the optical output power to 90 W with all other conditions being the same.

Keywords: semiconductor heterostructure, epitaxial integration, integrated laser-thyristor, output power.

Received: 06.08.2019