V. V. Shamakhov, D. N. Nikolaev, V. S. Golovin, D. A. Veselov, S. O. Slipchenko, N. A. Pikhtin, “Study of multimode semiconductor lasers with buried mesas”, Kvantovaya Elektronika, 2019, Volume 49, Number 12,Pages <nobr>1172

This article is cited in 1 paper

Lasers

Study of multimode semiconductor lasers with buried mesas

V. V. Shamakhov, D. N. Nikolaev, V. S. Golovin, D. A. Veselov, S. O. Slipchenko, N. A. Pikhtin

Ioffe Institute, St. Petersburg

Abstract: A buried-mesa AlGaAs/GaAs/GaInAs laser heterostructure emitting at a wavelength of 1050 nm is formed on a GaAs substrate by MOCVD. Mesa-stripe laser diodes with an aperture of 100 μm based on the obtained heterostructure are fabricated and studied. The internal optical losses of the laser diodes are 2.4 cm^-1. The output powers in both directions achieved at a cavity length of 2900 μm in the cw and pulsed regimes were 2.1 and 23 W, respectively.

Keywords: semiconductor laser, laser diode, heterostructure, MOCVD, buried mesa.

Received: 17.09.2019
Revised: 02.10.2019