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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 2019 Volume 49, Number 12, Pages 1175–1177 (Mi qe17156)

This article is cited in 12 papers

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Free-electron Auger quenching of the Fe2+ excited state in ZnSe

N. N. Il'icheva, G. A. Bufetovaa, È. S. Gulyamovaa, P. P. Pashinina, A. V. Sidorina, V. V. Tumorina, V. P. Kalinushkina, E. M. Gavrishchukb, D. V. Savinb, S. A. Rodinb, V. B. Ikonnikovb

a Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow
b Institute of Chemistry of High-Purity Substances RAS, Nizhnii Novgorod

Abstract: The influence of free electrons in Fe2+ : ZnSe crystals on the nonlinear transmission of high-power laser radiation with a wavelength of 2940 nm at room and low temperatures is experimentally found. Fe2+ : ZnSe samples additionally doped with Al are used. The transmission of an Al : Fe : ZnSe sample with electron conduction in a strong (peak intensity about 4.6 MW cm-2) field is almost the same as in a weak field both at low and room temperatures. The absence of an increase in the transmission of this sample under the action of high-power radiation is explained by increasing absorption saturation intensity of Fe2+ at this wavelength due a decrease in the lifetime of the excited state of Fe2+. The decrease in the lifetime is related to the well-known Auger quenching of impurity luminescence in semiconductors by free electrons.

Keywords: auger effect, free electrons, Fe2+ : ZnSe, nonlinear transmission.

Received: 25.09.2019


 English version:
Quantum Electronics, 2019, 49:12, 1175–1177

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