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JOURNALS // Kvantovaya Elektronika // Archive

Kvantovaya Elektronika, 2019 Volume 49, Number 12, Pages 1145–1148 (Mi qe17166)

This article is cited in 8 papers

Selection of reports presented at the 7th All-Russian Conference on Fiber Optics (8-11 October 2019, Perm) (edited compiled by S.L.Semjonov)

Silica fibres activated by YAG : Nd3+ nanocrystals

S. K. Evstropievabc, V. A. Aseeva, V. V. Demidovcd, N. K. Kuz'menkoa, A. S. Matrosovaacd, A. V. Khokhlovd, A. V. Komarovd, K. V. Dukel'skiiade, N. V. Nikonorova, K. V. Oreshkinaa

a St. Petersburg National Research University of Information Technologies, Mechanics and Optics
b State Technological Institute of St. Petersburg (Technical University)
c Bauman Moscow State Technical University
d All-Russian Research Center "S. I. Vavilov State Optical Institute", St. Petersburg
e St. Petersburg State University of Telecommunications

Abstract: We report data on the development of a polymer – salt method for the formation of aluminium yttrium garnet crystals doped with neodymium ions (YAG : Nd) inside the channels of a preform of microstructured fibre based on pure silica glass. The crystals are obtained by impregnating the channels with aqueous solutions of thermally decomposable salts (yttrium nitrate, aluminium nitrate, neodymium chloride) and an organic polymer, followed by drying and heat treatment at a temperature of 1100 °C. The resulting composite structure is drawn into the fibre at a temperature of 2000 °C. Using X-ray diffraction analysis, the presence of oriented YAG : Nd crystals ranging in size from 25 to 37 nm in the silica glass matrix of fibre is established. Measurements of the spectral dependence of optical losses in fibre show the presence of absorption bands of the optical signal, characteristic of Nd3+ ions. The shape of the luminescence spectra of nanocrystals is typical of YAG : Nd with a radiation peak at a wavelength of 1064 nm.

Keywords: silica glass, optical fibre, microstructured fibre, aluminium yttrium garnet, neodymium, nanocrystal, luminescence.

Received: 18.10.2019
Revised: 29.10.2019


 English version:
Quantum Electronics, 2019, 49:12, 1145–1148

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